22
RF Device Data
Freescale Semiconductor, Inc.
MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents and software to aid your design process.
Application Notes
?
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
?
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
?
Electromigration MTTF Calculator
?
RF High Power Model
?
.s2p File
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Nov. 2010
?
Initial Release of Data Sheet
1
Jan. 2011
?
Fig. 1, Pin Connections, corrected pin 4 label from RFout/VGS
to RFin/VGS,p.1
2
May 2012
?
Added Application Circuits Typical Performance table, p. 1
?
Capable of Handling VSWR bullet: corrected 1250 Peak Output Power value to 1500 and converted to table,
pp. 1, 3
?
Table 1, Max Ratings: final DC test specification for Drain--Source Voltage changed from +125 to +133 Vdc,
p. 2
?
Table 3, ESD Protection Characteristics: added the device’s ESD passing level as applicable to each ESD
class, p. 2
?
Table 4, Off Characteristics: finalDC test specification for Drain--Source Breakdown Voltage minimum value
changed from 125 to 133 Vdc, p. 2
?
Table 4, On Characteristics: added
Forward Transconductance, p. 2
?
Fig. 10, MTTF versus Junction Temperature -- CW: MTTF end temperature on graph changed to match
maximum operating junction temperature, p. 7
?
Added Fig. 12, Source and Load Impedances Optimized for
IRL, Power and Efficiency — Push--pull, p. 8
?
Added Fig. 13, 87.5--108 MHz FM Broadcast Reference Circuit Component Layout, p. 9
?
Added Table 9, 87.5--108 MHz FM Broadcast Reference Circuit Component Designations and Values, p. 9
?
Added Fig. 14, 87.5--108 MHz FM Broadband Reference Circuit Schematic, p. 10
?
Added Fig. 15, Power Gain and Drain Efficiency versus Output Power (87.5--108 MHz), p. 11
?
Added Fig. 16, Series Equivalent 87.5--108 MHz FM Broadcast Reference Circuit Source and Load
Impedance, p. 11
?
Added Fig. 17, 144--148 MHz Reference Circuit Component Layout, p. 12
?
Added Table 9, 144--148 MHz Reference Circuit Component Designations and Values, p. 12
?
Added Fig. 18, 144--148 MHz Reference Circuit Schematic, p. 13
?
Added Fig. 19, Series Equivalent 144--148 MHz Reference Circuit Source and Load Impedance, p. 14
?
Added Fig. 20, Power Gain and Drain Efficiency versus Output Power (144--148 MHz), p. 14
?
Added Fig. 21, Intermodulation Distortion Products versus Output Power (144--148 MHz), p. 14
?
Added Fig. 22, 144 MHz Harmonics @ 1 kW, p. 15
3
Oct. 2012
?
Added part number MRFE6VP61K25GSR5, p. 1
?
Added 2282--02 (NI--1230S--4 Gull) package isometric, p. 1, and Mechanical Outline, p. 20, 21
4
Mar. 2013
?
MRFE6VP61K25HR6 tape and reel option replaced with MRF6VP61K25HR5 per PCN15551.
?
Replaced Case Outline 98ASB16977C, Issue E with Issue F, p. 16, 17. Changed dimension C from
0.150?--0.200?
to CC 0.170?--0.190?.
?
Replaced Case Outline 98ARB18247C, Issue F with Issue G, p. 18, 19. Changed dimension C from
0.150?--0.200?
to CC 0.170?--0.190?. Added minimum Z dimension R0.00?.
?
Replaced Case Outline 98ASA00459D, Issue O with Issue A, p. 20, 21. Changed dimension C from
0.150?--0.200?
to CC 0.170?--0.190?. Corrected positional tolerance for dimension S.
4.1
Mar. 2014
?
MRFE6VP61K25HR5 part added to data sheet device box, p. 1
?
MRFE6VP61K25HSR6 tape and reel option replaced with MRFE6VP61K25HSR5 per PCN15551. (Note: this
copy updates the copy from Rev. 4 Revision History to accurately reflect the part number replacement in this
data sheet as described in PCN15551.)
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相关代理商/技术参数
MRFE6VP6300HR3
功能描述:射频MOSFET电源晶体管 VHV6 300W50VISM NI780H-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
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制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
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功能描述:射频MOSFET电源晶体管 VHV6 300W50VISM NI780H-4
RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6VP6300HSR3
功能描述:射频MOSFET电源晶体管 VHV6 300W50VISM NI780S-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6VP6300HSR5
功能描述:射频MOSFET电源晶体管 VHV6 300W50VISM NI780S-4
RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6VP8600H
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MRFE6VP8600HR5
功能描述:射频MOSFET电源晶体管 VHV6 600W NI1230H 50V
RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6VP8600HR6
功能描述:射频MOSFET电源晶体管 VHV6 600W NI1230H 50V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray